Department of Electrical Computer Engineering, lowa State University, Ames IA 50014;
Department of Electrical Computer Engineering, lowa State University, Ames IA 50014;
Microelectronics Research Center, lowa State University, Ames IA 50014;
Nazarbayev University, Astana, Kazakhstan;
Nazarbayev University, Astana, Kazakhstan;
Department of Electrical Computer Engineering, lowa State University, Ames IA 50014;
机译:氧污染对纳米晶硅中少数载流子寿命和缺陷密度的影响
机译:净掺杂,过量载流子密度和退火对补偿n型硅中硼氧相关缺陷密度的影响
机译:掺杂的InAs / InAsSb II型红外超晶格的少数载流子寿命与温度和掺杂密度的关系
机译:氧气掺杂纳米晶体中的缺陷密度和载体寿命
机译:硅上异质外延的锗中少数载流子寿命与缺陷密度分布的经验相关性。
机译:通过固体源掺杂技术实现低本征缺陷密度的N掺杂石墨烯
机译:净掺杂,过量载流子密度和退火对补偿N型硅硼氧相关缺陷密度的影响
机译:应变诱导缺陷对尼泊掺杂亚0.2 Ga亚0.8 as / Gaas mQW中过剩载流子寿命和双极扩散的影响