机译:净掺杂,过量载流子密度和退火对补偿n型硅中硼氧相关缺陷密度的影响
Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia;
Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany;
Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany;
Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia,Apollon Solar, 66 cours Charlemagne, 69002 Lyon, France,INSA de Lyon, INL, 7 av. J. Capelle, 69621 Villeurbanne Cedex, France;
Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia;
Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia;
机译:补偿N型硅再生的动力学和动力学
机译:N型硅的表面重组速度和本体寿命对光生过剩载流子密度和温度分布的影响
机译:缺陷和后沉积处理对轻掺杂磷的大晶粒多晶硅薄膜中自由载流子密度的影响
机译:补偿n型硅中硼氧缺陷的形成动力学和程度
机译:使用原子氢降低掺硼硅中的重组电流密度。
机译:掺杂浓度波动导致n型硅的线性磁阻
机译:净掺杂,过量载流子密度和退火对补偿N型硅硼氧相关缺陷密度的影响
机译:掺杂硼,镓和铟的p型硅的迁移率,电阻率和载流子密度