ZnO:Zn Phosphor Thin Films Prepared by Laser Ablation

摘要

ZnO:Zn phosphor thin films have been prepared by laser ablation. The ZnO:Zn thin films are well crystallized, even they are deposited at low substrate temperature of 300 ℃ without post-annealing. The ZnO:Zn films show a strong whitish-green PL emission. It has been found that the concentration of luminescent centers in the films can be controlled by the composition of the source pellet and by the reductive gas pressure in the growth chamber.