Chemical Vapor Deposition of MoS_2 on and in TiN Coatings

摘要

MoS_2 is deposited from a MoCl_5/H_2S/H_2 gas mixture in a hot wall reactor. The whole process including the powder formation and the film formation is investigated. It is found that the deposition rate changes not strongly at the transition from powder to the coating deposition. The explanation is that also in the film formation range particles are preformed in the gas phase. The size of the particles is determined by TEM, SEM, BET and thermophoretic investigations. The diameter range of the particles were 15 -100 nm. TiN-MoS_2 deposition experiments from MoCl_5/H_2S/H_2/N_2/TiCl_4 gas mixtures indicate that the S-activity in the gas phase plays an important role.