Tokyo Electron Ltd., 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan;
Tokyo Electron America, Inc., 2400 Grove Boulevard, Austin, TX 78741, USA;
Semiconductor Materials Laboratory, Fine Electronic Research Laboratories, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552, Japan;
Laboratory for Micro-and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron Kyushu Ltd., 1-1, Fukuhara, Koshi-shi, Kumamoto 861-1116, Japan;
Tokyo Electron America, Inc., 2400 Grove Boulevard, Austin, TX 78741, USA;
Semiconductor Materials Laboratory, Fine Electronic Research Laboratories, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552, Japan;
Semiconductor Materials Laboratory, Fine Electronic Research Laboratories, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552, Japan;
JSR MICRO NV, Technologielaan 8 - B-3001 Leuven, Belgium;
JSR MICRO NV, Technologielaan 8 - B-3001 Leuven, Belgium;
Graduate School of Engineering, Osaka University, Ibaraki, Osaka 567-0047, Japan,Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;
Laboratory for Micro-and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland;
Laboratory for Micro-and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands;
Tokyo Electron Ltd., 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan;
Graduate School of Engineering, Osaka University, Ibaraki, Osaka 567-0047, Japan,Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;
机译:减少乙缩醛光刻中乙缩醛基化学放大抗蚀剂中的除气段
机译:基于低活化能的非化学放大光刻胶(n-CARs)的设计和开发,用于下一代EUV光刻
机译:使用电子束光刻和化学放大的抗蚀剂工艺制造7纳米四分之一间距的线和间隔图案的理论研究:III。石英基板上的曝光后烘烤
机译:通过光敏化化学放大抗蚀剂对EUV光刻破坏RLS折衷的挑战? (PSCAR?)洪水曝光
机译:探索基于溶出抑制剂的非化学放大抗蚀剂,用于193 nm光刻。
机译:高敏感性抗蚀性对EUV光刻进行抗衡性:材料设计策略和绩效结果综述
机译:用于EUV光刻的负色度化学放大分子抗蚀剂平台的11nm半间距分辨率