Distance measurement of sub-micron mos devices via internet

摘要

The project concerning the internet measurement of sub-micron devices is undergoing at INSA Toulouse, with the objective to propose a permanent access to highprecision static current/voltage characteristics of sub-micron devices. A set of n-channel and p-channel devices, with short and long channels are already available in 0.7#mu#m technology. A new set of devices fabricated in 0.25#mu#m CMOS technology will also be connected and available in October 98.