High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy

摘要

This work presents the recent progress in SSRM capabilities highlighting enhanced spatial resolution ( < 5 nm) and excellent concentration sensitivity ( < 20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.