首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >SUCCESSFUL MARKET ENTRY OF APPLIED MATERIALS' ATON~TM SYSTEM FOR SPUTTERED SiN:H
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SUCCESSFUL MARKET ENTRY OF APPLIED MATERIALS' ATON~TM SYSTEM FOR SPUTTERED SiN:H

机译:溅射SiN:H的应用材料的ATON〜TM系统成功进入市场

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In order to increase the efficiency primarily for multi-crystalline wafer-based solar cells, a SiN:H anti-reflective and passivation layer is commonly used as the front surface coating. Conventionally, PECVD processes are utilized in this application. However, sputtering technology possesses several inherent process advantages: it is silane-free, derived from well-proven applications in the architectural glass coating industry, and delivers excellent uniformity at high throughput rates. In close cooperation with the FhG ISE in Freiburg, Applied Materials has developed a sputtering process for SiN:H resulting in cell efficiencies and yield distribution comparable to slower PECVD [1,2] techniques. The first production system has been in routine operation since 2005. Initial results of comparative material performance properties based upon high volume production data are presented in this paper for sputtered SiN:H.
机译:为了主要针对基于晶片的多晶太阳能电池提高效率,通常将SiN:H抗反射和钝化层用作前表面涂层。通常,在该应用中利用PECVD工艺。但是,溅射技术具有一些固有的工艺优势:无硅烷,源自建筑玻璃涂料行业中久经考验的应用,并且在高生产率下具有出色的均匀性。在与弗莱堡的FhG ISE紧密合作下,应用材料公司开发了一种用于SiN:H的溅射工艺,从而产生了与较慢的PECVD [1,2]技术相当的电池效率和良率分布。自2005年以来,第一个生产系统已开始常规运行。本文针对溅射SiN:H提出了基于大量生产数据的可比较材料性能特性的初步结果。

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