STRAIN BALANCED QUANTUM WELL MONOLITHIC TANDEM SOLAR CELLS

摘要

The effect of incorporating strain balanced multi-quantum well structures in InGaP/GaAs monolithic tandem solar cells is investigated. At present the majority of InGaP/GaAs tandem cells are current limited by the bottom GaAs junction. Incorporation of multi-quantum well structures in the GaAs bottom junction extends the cell absorption to longer wavelengths. This allows current matched dual junction tandem cells to achieve higher efficiencies. A current matched top cell is presented and compared to a control cell. Measurements at higher concentration are also presented.