首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >EFFECT OF MAGNETRON SPUTTERED SEMICONDUCTING TIO_2 LAYERS ON THE PERFORMANCE OF DYE SENSITIZED SOLAR CELLS
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EFFECT OF MAGNETRON SPUTTERED SEMICONDUCTING TIO_2 LAYERS ON THE PERFORMANCE OF DYE SENSITIZED SOLAR CELLS

机译:磁控溅射Tio_2层对染料敏化太阳能电池性能的影响

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Semiconducting titanium dioxide (TiO_2) is a key component of dye sensitized solar cells (DSC) [1]. Apart from devices based on organic hole conductors [2], the current embodiment of the DSC employs nanocrystalline TiO_2 films that are applied directly onto the transparent conducting glass support, i.e. a fluorine doped tin dioxide (FTO) film. The mesoporous structure of the TiO_2 layer exposes the FTO glass to the redox electrolyte increasing the dark current [3] and reducing cell performance in particular at low light levels. Introducing a compact layer between the FTO glass and the TiO_2 nanocrystals should block this undesirable electron flow from the FTO to the triiodide ions in the electrolyte. It also allows the use of redox systems that show reversible electrochemical behavior on the FTO glass. Here we report on the deposition of dense TiO_2 layers by reactive Pulse Magnetron Sputtering, a high rate PVD technique. The crystal structure and composition of the compact underlayer was found to exhibit a decisive effect on the photovoltaic response of the films.The cells were tested in an AM 1.5 spectral mismatch corrected solar simulator over a wide range of different light intensities. Importantly, our tests revealed that the diode ideality factor of the DSC improved significantly in the presence of the TiO_2 underlayer. The loss in the open circuit photovoltage was 60-70 mV upon reducing the light intensity by a factor of ten indicating the ideality factor of the diode to be between 1 and 1.2 as compared to about 1.2 - 1.4 for the unprotected FTO electrode. As a consequence the DSC maintains its photovoltaic performance well at low light levels. A fill factor of 76 % and an efficiency of about 7 % was obtained even at the low light intensity of 10 W/m~2. Thus the advantage of using the compact underlayer emerges especially at low irradiation levels due to the higher V_(OC) and to the better ideality factor of the photo-diode. The results indicate that the additional dense TiO_2 layer improve the performance of the solar cell significantly in particular under indoor light conditions.
机译:半导体二氧化钛(TiO_2)是染料敏化太阳能电池(DSC)的关键组成部分[1]。除了基于有机空穴导体的器件[2]以外,DSC的当前实施例还采用了纳米晶TiO_2薄膜,该薄膜直接应用于透明导电玻璃载体上,即掺氟二氧化锡(FTO)薄膜。 TiO_2层的中孔结构使FTO玻璃暴露于氧化还原电解质,从而增加了暗电流[3]并降低了电池性能,特别是在低光照水平下。在FTO玻璃和TiO_2纳米晶体之间引入致密层将阻止这种不良的电子从FTO流向电解质中的三碘化物离子。它还允许使用在FTO玻璃上表现出可逆电化学行为的氧化还原系统。在这里,我们报道了通过反应性脉冲磁控溅射,一种高速率PVD技术沉积致密的TiO_2层。发现致密底层的晶体结构和组成对薄膜的光伏响应具有决定性的影响。在AM 1.5光谱失配校正的太阳能模拟器中,在各种不同的光强度下对电池进行了测试。重要的是,我们的测试表明,在存在TiO_2底层的情况下,DSC的二极管理想因子显着提高。当将光强度减小十倍时,开路光电压的损失为60-70 mV,这表明二极管的理想因数在1到1.2之间,而未保护的FTO电极约为1.2-1.4。结果,DSC在弱光下很好地保持了其光伏性能。即使在10 W / m〜2的低光强度下,也可以达到76%的填充率和约7%的效率。因此,由于较高的V_(OC)和更好的光电二极管理想因子,使用致密底层的优点尤其在低辐照水平下显现。结果表明,特别是在室内光照条件下,额外的致密TiO_2层显着提高了太阳能电池的性能。

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