A High-Performance 14.4 to 19.7 GHz Power Detector Fabricated with Flip-Chip Technology

摘要

A rugged flip-chip technology with potential for low cost at high manufacturing volume was employed to fabricate a power detector using mixed device technologies. The circuit consists of one discrete GaAs pHEMT chip and one GaAs dual-Schottky-diode chip flip-attached to a 3.5 mm by 2.1 mm substrate containing only passive circuitry. The power detector offers two different modes of operation to enable compensation for drift of the detector diode response over temperature.