Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

摘要

Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on hetero-epitaxial growth of 3C-SiC. (100) Si substrate patterned with SiO_2 mask was used as the substrate. Before CVD process, V shape crater was made on Si surface by HC1 etching. And growth condition of CVD was optimized. Single crystal of 3C-SiC was grown laterally on SiO_2 layer. Cross-sectional transmission electron microscopic observation indicated that crystal quality of LEO region was single and no defect crystal.