Demonstration of High-power X-band Oscillation in p~+~-~+ 4H-SiC IMPATT Diodes with Guard-ring Termination

摘要

We fabricated a p~+~-~+ 4H-SiC IMPATT diode with guard-ring termination. The p~+ -layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.