Quantum Devices Transport Simulation Using Transfer Matrix Method

摘要

The paper describes properties of one-dimensional simulator for modeling quantum electronic system with an arbitrary layered semiconductor structure. Actually, the simulator is being used for predicting the significant parameters of newly designed resonant tunneling diodes with structure containing band steps outside the barriers to decrease the interference between the emitter charge of free electrons and charge in the well leading to undesirable current plateau on the I-V diode characteristics. Kinetic quantum transport models (Wigner function, Green function, density matrix) are general and therefore complex and very time consuming. For the fast design the simple transfer matrix (TM) method seems to be more reliable. On the other hand it can not accurately treat scattering effects and transient operations.