Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Samsung Electronics, Hwaseong, Gyeonggi, South Korea;
Computer architecture; Delays; Microprocessors; FinFETs; Tuning; Bandwidth; Program processors;
机译:BTI标准单元的布局形状依赖性研究,包括10 nm FinFET过程中恢复效果的研究
机译:标准细胞BTI的布局形状依赖性研究包括10nm FinFET过程中的恢复效果
机译:在2017年世界移动大会上展示的基于10NM FINFET工艺的MEDIATEK HELIO X30
机译:10nm Finfet技术中的690mV 4.4Gbps / PIN全数字LPDDR4 PHY
机译:超低功耗10nm FinFET的设计策略。
机译:具有嵌入式校准方案的动态pH传感器采用先进的CMOS FinFET技术
机译:混合CMOS-Spin波器件电路的设计和基准与10nm CMOS相比