首页> 外文会议>ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference >A 0.065mm2 19.8mW single channel calibration-free 12b 600MS/s ADC in 28nm UTBB FDSOI using FBB
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A 0.065mm2 19.8mW single channel calibration-free 12b 600MS/s ADC in 28nm UTBB FDSOI using FBB

机译:采用FBB的28nm UTBB FDSOI中的0.065mm2 19.8mW单通道免校准12b 600MS / s ADC

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Most of the high speed low power ADCs are interleaved using calibration which have some drawback like calibration time, the complexity associated with calibration algorithm and its circuit implementation. Therefore a single channel calibration-free 12-bit ADC sampling at 600MS/s in 28nm UTBB FDSOI is presented. Selected ADC architecture of mixing Pipelined stage and Asynchronous SAR demonstrates advantages and suitability of different design techniques utilizing forward body bias (FBB) capability available for FDSOI CMOS. Measured silicon results show >9dB performance improvement with FBB voltage range of 0-1.8V. Integrated body bias generator (BBGEN) ensures required voltages for FBB. This work measures the 60.7dB SINAD at Nyquist frequency achieving Walden FOM of 37.2fJ/conv-step and Schreier FOM of 162.5dB at 600MS/s. It is also achieving 57dB SINAD at 800Ms/s, >50dB SINAD up to 950MS/s and 58.5dB SINAD till 500Mhz input frequency.
机译:大多数高速低功耗ADC使用校准进行交错处理,这具有一些缺点,例如校准时间,与校准算法相关的复杂性及其电路实现。因此,提出了在28nm UTBB FDSOI中以600MS / s的速率进行单通道免校准的12位ADC采样。选定的混合流水线级和异步SAR的ADC体系结构展示了不同设计技术的优势和适用性,这些技术利用了FDSOI CMOS可用的正向主体偏置(FBB)功能。测得的硅结果表明,在0-1.8V的FBB电压范围内,性能提高了> 9dB。集成的车身偏置发生器(BBGEN)确保FBB所需的电压。这项工作在Nyquist频率下测量60.7dB SINAD,在600MS / s时可达到37.2fJ / conv-step的Walden FOM和162.5dB的Schreier FOM。在输入频率为500Mhz时,它还可以在800Ms / s时达到57dB SINAD,在950MS / s时达到> 50dB SINAD和58.5dB SINAD。

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