Department of Electrical Engineering, Chinese Culture University, Taipei 111, Taiwan, ROC;
Graduate Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC;
Graduate Institute of Materials Science and Nanotech;
HfO_2; HfSiO; High-k Dielectric; interfacial property; material characterization;
机译:通过HfO_2与Si衬底固相反应生长具有HfSiO_x界面层的0.6nm-EOT高k栅堆叠
机译:具有Sio_2 / hfo_2 / hfsio门堆叠和Tan金属门的N-MOSFET的热载流子效应
机译:沉积后退火气氛对HfO_2 / Ge_3N_4栅堆叠界面和电性能的影响
机译:表征HKVSI和HFSIO / SI栅极堆栈的界面性质
机译:通过原子层沉积进行金属栅/高k电介质堆叠工程:材料问题和电性能。
机译:热收支对沉积HfSiO / TiN栅堆叠MOSCAP结构的原子层电学特性的影响
机译:热预算对原子层沉积HfsiO / TiN栅堆叠mOsCap结构电特性的影响。