Growth and Characterization of Thermoelectric Mg_2Si Thin Films

摘要

In this work, room temperature co-deposition of Mg and Si was used to successfully fabricate Mg_2Si thin films on Si substrate by dual cathode magnetron sputtering (DCMS). Films were annealed at 380℃. Various Mg/Si sputtering power ratios have been examined. XRD, SEM and IR reflectivity measurements on grown and annealed films, reveal that annealing is enhancing the formation of crystalline Mg_2Si.