GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
GLOBALFOUNDRIES Singapore Pte. Ltd., 738406, Singapore;
Random access memory; MOS devices; Transistors; Implants; Automotive engineering; Optimization; Boron;
机译:具有超低写入位线电压摆幅的超低功耗读解耦SRAM
机译:10-NM SRAM设计使用栅极调制的自塌方写入辅助,可实现175 MV VMIN减少,具有可忽略的电力开销
机译:250 mV 8 kb 40 nm超低功耗9T电源反馈SRAM(SF-SRAM)
机译:55nm超低功耗(55ulp)汽车级高清SRAM,带Sub 0.7V 16MB Vmin
机译:面向未来超低功耗微电子的新型8-T CNFET SRAM单元设计。
机译:具有自适应VVss控制的高性能低VmIN 55nm 512Kb无干扰8T sRam