首页> 外文会议>Electron Devices and Semiconductor Technology, 2009. IEDST '09 >Piezoelectric polymer oxide semiconductor field effect transistor (POSFET) devices for touch sensing
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Piezoelectric polymer oxide semiconductor field effect transistor (POSFET) devices for touch sensing

机译:用于触摸感应的压电聚合物氧化物半导体场效应晶体管(POSFET)器件

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This work presents the POSFET based touch sensing devices and their experimental evaluation. POSFET touch sensing devices presented here are primarily developed for the robotic applications. The design of these devices is inspired from human sense of touch. These devices are implemented by spin coating thin (~2.5 mum) piezoelectric polymer (PVDF-TrFE) film, directly on to the gate area of MOS transistor. The polymer film is processed in situ. The POSFET device represents an integral ldquosensotronicrdquo unit comprising of transducer and the transistor and are thus capable of dasiasensing and processing at same sitepsila. The POSFET touch sensing devices are tested in a wide range (0.15-5N) of dynamic normal forces and at different frequencies.
机译:这项工作介绍了基于POSFET的触摸感应设备及其实验评估。这里介绍的POSFET触摸感应设备主要是为机器人应用而开发的。这些设备的设计灵感来自人类的触觉。这些器件是通过将薄(约2.5微米)的压电聚合物(PVDF-TrFE)膜直接旋涂到MOS晶体管的栅极区域上来实现的。聚合物膜原位处理。 POSFET器件代表了一个由传感器和晶体管组成的集成式电子超音波单元,因此能够在相同的位置上进行差动感测和处理。 POSFET触摸感应设备已在宽范围(0.15-5N)的动态法向力和不同频率下进行了测试。

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