LOW VOLTAGE OPERATION PHOTOTRANSISTOR WITH InGaP/AlGaAs/GaAs COMPOSITE EMITTER

机译：具有InGaP / AlGaAs / GaAs复合发射极的低压操作光敏电阻

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We report a new composite-emitter heterojunction phototransistor (CEHPT) with a composite emitter formed of a 0.04-μm In_(0.5)Ga_(0.5)P bulk layer and a 0.06-μm Al_(0.46)Ga_(0.55)As/GaAs digital graded superlattice (DGSL). The DGSL structure forming a step-wise graded composition effectively smoothes out the potential spike resulting from the conduction-band discontinuity. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V.

机译：我们报告了一种新型的复合发射极异质结光电晶体管（CEHPT），其复合发射极由0.04-μmIn_（0.5）Ga_（0.5）P体层和0.06-μmAl_（0.46）Ga_（0.55）As / GaAs数字形成分级超晶格（DGSL）。形成逐步渐变成分的DGSL结构有效地消除了由导带不连续性引起的潜在尖峰。 CEHBT的集电极-发射极偏移电压为55 mV，基极-发射极导通电压为0.87V。

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《Electrochemical Society Meeting and International Symposium on State-of-the-Art Program on Compound Semiconductors and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors; 20030427-20030502; Paris; FR》|2003年|P.19-23|共5页
会议地点 Paris(FR);Paris(FR);Paris(FR)
作者
S. W. Tan; W. T. Chen; M. Y. Chu; W. S. Lour;
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Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, 202, Taiwan, Republic of China;

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正文语种 eng
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1. Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs) [J] . Shih-Wei Tan, Wei-Tien Chen, Min-Yuan Chu, Superlattices and microstructures . 2003,第4期

机译：InGaP / AlGaAs / GaAs复合发射极异质结双极/光电晶体管（CEHBT / CEHPT）的光电特性
2. Spatial dynamics of high current turn-on in low-voltage AlGaAs/GaAs phototransistors [J] . S. O. Slipchenko, A. A. Podoskin, O. S. Soboleva, Journal of Applied Physics . 2016,第12期

机译：低压AlGaAs / GaAs光电晶体管中大电流导通的空间动力学
3. Temperature Dependence of Current Gain, Ideality Factor, and Offset Voltage of AlGaAs/GaAs and InGaP/GaAs HBTs [J] . Lin Y.-S., Jiang J.-J. Electron Devices, IEEE Transactions on . 2009,第12期

机译：AlGaAs / GaAs和InGaP / GaAs HBT的电流增益，理想因子和失调电压的温度依赖性
4. LOW VOLTAGE OPERATION PHOTOTRANSISTOR WITH InGaP/AlGaAs/GaAs COMPOSITE EMITTER [C] . S. W. Tan, W. T. Chen, M. Y. Chu, Symposium on state-of the-art program on compound semiconductors . 2003

机译：带InGaP / AlgaAs / GaAs复合发射器的低压操作光电晶体管
5. Heterojunctions of the GaAs/AlGaAs system: Crystal growth by metalorganic chemical vapor deposition and characterization using capacitance-voltage techniques for the determination of the conduction band discontinuity [D] . Kawase, Yoshihiro 1987

机译：GaAs / AlGaAs系统的异质结：通过金属有机化学气相沉积进行的晶体生长以及使用电容电压技术进行表征，以确定导带不连续性
6. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications [O] . Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, 2011

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7. Binary optical switch and programmable optical logic gate based on the integration of GaAs/AlGaAs surface-emitting lasers and heterojunction phototransistors [O] . Y. Lu, J. Cheng, R.E. Leibenguth, 1994

机译：基于GaAs / Algaas表面发射激光器和异质结光电晶体的集成的二进制光开关和可编程光学逻辑门
8. Visible-Spectrum (lambda = 65O nm) Photopumped (Pulsed, 300 K) Laser Operation ofa Vertical-Cavity AlAs-AlGaAs/InAlP-InGaP Quantum Well Heterostructure Utilizing Native Oxide Mirrors [R] . Ries, M. J., Holonyak, N., Chen, E. I., 1996

机译：可见光谱（λ= 650nm）光电泵浦（脉冲，300K）激光操作垂直腔alas-alGaas / Inalp-InGap量子阱异质结构利用天然氧化物反射镜

LOW VOLTAGE OPERATION PHOTOTRANSISTOR WITH InGaP/AlGaAs/GaAs COMPOSITE EMITTER

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