SINGLE AND FEW ELECTRON DEVICES INTEGRATION TRENDS

摘要

Single Electron Transistors (SETs) are considered to be promising candidates for high density and very tow power integrated circuits. One of the reason is their ability to be scaled down to nanometer size. These devices have also some specific features, such as Coulomb Blockade Oscillations (CBO), that MOSFET have not. However there are some constraints and physical limitations. In this presentation, we will review the different solutions which have been explored to fabricate and optimize SETs and we will give the trends. We will also discuss the potential application of these devices to integrated circuits, based on their operation and properties, in comparison with those of MOSFETs.