SUB-QUARTER-MICRON PMOSFET DC AND AC NBTI DEGRADATION

摘要

NBTI becomes the reliability limit for PMOSFETs in advanced technologies. In this paper, the channel length, channel width, gate pulse frequency and duty cycle effect on 0.13/0.24 μm technology PMOSFET NBTI lifetime are studied. Both the lifetime (5 mV V_T shift) and the worst-case DC threshold voltage shift in 10 years are extracted. The degradation mechanism and frequency dependent conversion factor between AC and DC degradation are also studied based on the experiment data.