MOCVD MATERIALS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS

摘要

To assess the performance of the AIX 2400/2600G3 Planetary Reactor~(~R) family we report on the growth of (AI)GaAs single structures and Differential Bragg Reflectors (DBR), GaInP and (In)GaN multi-quantum wells and single layers in configurations ranging from 24x2 inch for nitrides to 7x6 inch for Arsenide/Phosphide based materials. We achieved on-wafer doping uniformities of GaAs on 6 inch of 1.24% and 1.1% standard deviation at carrier densities of 8 x 10~(17)cm~(-3) and 3 x 10~(19) cm~(-3) for n- and p-type materials, respectively. Doping unfonnities of 1.26% standard deviation were achieved for Al_(0.3)GaAs:Si in analogous experiments. In addition, thickness unformities with standard deviations on the order of 0.17% were achieved for these materials. In fully loaded runs of InGaN MQW stuctures we achieved typical standard deviations of the photoluminescence wavelengths on the order of 1.6 nm for structures emitting in the blue through green spectral range. This result was confirmed in 7 consecutive runs. In addition, we report on reflectivity and reflectance anisotropy measurements as an easy and straightforward in-situ monitoring method for the growth of a wide range of material systems.