LOW TEMPERATURE DEPOSITION OF MACROCRYSTALLINE SILICON FILMS BY PLASMA ASSISTED-CVD

摘要

The development of a low temperature thin film silicon technology is of great interest for applications in large area electronics and optoelectronics especially on flexible plastic substrates. Microcrystalline silicon, μc-Si, has attracted considerable attention due to its better stability and electronic properties than amorphous silicon. We present data on the PACVD growth of μc-Si at low temperature (RT-180℃). The emphasis is on the growth kinetics of very thin layers (< 100 nm) and on interface and surface processes that control material crystallinity.