Room Temperature Deposited Enhancement Mode And Depletion Mode Indium Znic Oxide Thin Film Transistors

摘要

Enhancement mode and depletion mode indium zinc oxide (IZO) thin film transistors (TFTs) were fabricated on glass substrates using rf magnetron sputtering deposition at room temperature. Plasma enhanced chemical vapor deposited SiO_2 or SiN_x was used as the gate insulator. The enhancement mode TFTs showed excellent pitch-off and the threshold voltage was 0.75 V. The drain current on-to-off ratio was > 10~6. The maximum field effect mobility in the channel was 308 cm~2. V~(-1).s~(-1). The depletion mode TFTs had a threshold voltage of-2.5V. The drain current on-to-off ratio was > 10~5. The maximum field effect mobility in the channel was 14.5 cm~(-2).V~(-1).s~(-1).