Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V−1s−1 and 16 cm2V−1s−1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.
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机译：氧化铟（In2O3）膜是通过在环境空气中进行超声喷雾热解沉积而成的，并结合到底栅共面和交错薄膜晶体管中。对于共平面结构和交错结构，所制造的器件表现出的电子传输特性分别具有1 cm2V-1s-1和16 cm2V-1s-1的迁移率。 In2O3晶体管的集成实现了具有高增益（5.3 V / V）和低电压工作的单极逆变器。 In2O3的低温沉积（≤250C）也允许在独立的50μm厚的聚酰亚胺箔上制造晶体管。所得的柔性In2O3晶体管具有良好的特性，即使弯曲至4mm的拉伸半径，也能保持完整的功能。
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