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FFT Impedance Spectroscopy Analysis Of The Growth Of Anodic Oxides On Si With Various Electrolytes

机译:各种电解质在Si上生长阳极氧化物的FFT阻抗谱分析

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The growth of anodic oxides on (100) p-Si has been analyzed with FFT impedance spectroscopy (FFTIS) in a comparative study for several "organic electrolytes", as well as H_2O. Measurement results strongly support the model of anodic oxide growth contained in the Current-Burst-Model (CBM), developed earlier in the context of current / voltage oscillations. Based on this model the mechanisms of the anodic oxidation were studied in detail not only qualitatively, but also quantitatively. FFTIS allows, e.g., the in-situ monitoring of the oxide layer thickness or the oxide coverage. The analyzed oxides could be grouped into essentially two different classes according to their structure as measured by atomic force microscopy, in good agreement with predictions from the FFTIS results.
机译:阳极氧化在(100)p-Si上的生长已通过FFT阻抗谱(FFTIS)进行了比较研究,涉及几种“有机电解质”以及H_2O。测量结果有力地支持了电流爆发模型(CBM)中包含的阳极氧化物生长模型,该模型是在电流/电压振荡的背景下开发的。在此模型的基础上,不仅定性,而且定量地研究了阳极氧化的机理。 FFTIS允许例如对氧化物层厚度或氧化物覆盖率的原位监测。根据原子力显微镜测量的结构,可以将被分析的氧化物基本分为两类,这与FFTIS结果的预测非常吻合。

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