Heteroepitaxy of 1-D Ga_2O_3-GaN Core-Shell Nanorods

摘要

1-D Ga_2O_3-GaN core-shell nanorods were successfully fabricated by two-step synthesis processes. The Ga_2O_3 nanorods were synthesized by the reaction of Ga with SiO_2 at 600℃. Subsequently, one dimensional Ga_2O_3-GaN core-shell nanorods were successfully achieved by nitrifying the as-synthesized Ga_2O_3 nanorods under ammonia ambient at 700℃ for 6 hours. The field-emission scanning electron microscope (FESEM, JSM-6500F), X-ray spectrometer (SHINMADZU), and the field-emission transmission electron microscope (FETEM, JEM-3000F) were utilized to investigate the morphologies, crystal structures, and compositions of nanorods in detail, respectively. Furthermore, optical investigation of Ga_2O_3-GaN coaxial nanorods heterostructures was carried out by photoluminescence (PL) measurements in present study.