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Growth and Formation of Thin Anodic Films on InP

机译:InP上阳极薄膜的生长和形成

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摘要

Growth, formation and stability of anodic oxides obtained on n-InP were investigated by coupling electrochemical methods and XPS analyses. Using transient photocurrent and Mott-Schottky behavior, as in situ probes, we have pointed out several steps for InP oxidation process, related to a gradual oxide coverage evidenced by XPS characterizations. The current density chosen to perform the oxidation governs the resulting chemical composition, the texture and the electrical properties of the oxide. Low applied current densities lead to the formation of thin (around few nanometers) and homogeneous films, while high current densities induce thicker and less homogeneous oxides. The resulting electrical properties also strongly depend on the anodization mode. The thinner homogeneous layers, grown with low current densities, exhibit the best passivating features.
机译:通过耦合电化学方法和XPS分析研究了在n-InP上获得的阳极氧化物的生长,形成和稳定性。使用瞬态光电流和Mott-Schottky行为作为原位探针,我们指出了InP氧化过程的几个步骤,这些步骤与XPS表征证明的逐步覆盖氧化物有关。选择进行氧化的电流密度决定了所得的化学成分,织构和氧化物的电性能。低的施加电流密度导致形成薄的薄膜(大约几纳米)和均匀的膜,而施加的高电流密度引起较厚且较不均匀的氧化物。所得的电性能也强烈取决于阳极氧化模式。以低电流密度生长的较薄的均质层表现出最佳的钝化特征。

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