High Performance W-Band Wafer-Scale Assembly for III-V Semiconductor MMICs

摘要

Two high performance Wafer-Scale Assembled W-Band passive 3-D architectures are presented. The first is constructed of two GaAs wafers that are bonded together to form an 8um high intra-wafer cavity. The second is composed of four GaAs wafers of various thicknesses which are stacked and bonded to form a range of intra-wafer cavity heights. The robustness of both architectures are examined with DC test structures. Advanced 3-D passive RF elements with low insertion loss, high return loss, and excellent isolation are successfully integrated into these WSAs.