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PDN impedance modeling of 3D system-in-package

机译:3D封装系统的PDN阻抗建模

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摘要

Power supply impedance of power distribution network (PDN) for a 3D system-in-package (SiP) has been investigated. The 3D SiP consisted of 3 stacked chips and an organic package substrate. These three chips were a memory chip on the top, Si interposer in the middle, and a logic chip on the bottom. The size of each chip was the same, and 9.93 mm by 9.93 mm. A large number of through silicon vias (TSV's) were formed to the silicon interposer and the logic chip. Next, the 3 stacked chips were assembled on the organic package substrate, whose size was 26 mm by 26 mm. The PDN impedance for each chip was extracted by using XcitePI (Sigrity Inc.). Then, the PDN impedance for the organic package substrate was extracted by using SIwave (Ansys Inc.). Finally, the total PDN impedance was synthesized. In this paper, the PDN impedances of the memory chip, Si interposer, and the logic chip were calculated respectively, and then the total PDN impedance was synthesized to estimate the power supply disturbance due to the anti-resonance peak.
机译:已经研究了3D封装系统(SiP)的配电网络(PDN)的电源阻抗。 3D SiP由3个堆叠的芯片和一个有机封装基板组成。这三个芯片在顶部是存储芯片,在中间是Si中介层,在底部是逻辑芯片。每个芯片的尺寸相同,为9.93毫米x 9.93毫米。在硅中介层和逻辑芯片上形成了大量的硅穿孔(TSV)。接下来,将3个堆叠的芯片组装在尺寸为26mm乘26mm的有机封装基板上。通过使用XcitePI(Sigrity Inc.)提取每个芯片的PDN阻抗。然后,使用SIwave(Ansys Inc.)提取有机封装基板的PDN阻抗。最后,合成了总的PDN阻抗。本文分别计算了存储芯片,Si中介层和逻辑芯片的PDN阻抗,然后合成了整个PDN阻抗,以估计由于反谐振峰引起的电源干扰。

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