Sub-nanosecond transients in SC field dynamics of CdTe:Ge crystals

摘要

We analyze peculiarities of free carrier and SC field sub-nanosecond dynamics in CdTe:Ge crystals, using DFWM technique at 1.06 μm wavelength. Fast decay and subsequent recovery of FWM signals, both on photorefractive and free carrier gratings, indicate electron-hole competition and presence of few carrier generation sources. Numerical calculations, using two-deep trap model, explain the origin of fast transients, but not electron-trap saturation with excitation; for this an additional defect is required.