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Suppression mechanism of volume shrinkage for SOG film by plasma treatment

机译:等离子处理抑制SOG薄膜体积收缩的机理

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摘要

We investigated the suppression mechanism of volume shrinkage for a spin on glass (SOG) film by plasma treatment using hard X-ray photoelectron spectroscopy, X-ray reflectometry (XRR), and UV-Raman spectroscopy. The suppression of the SOG film shrinkage was attributed to the control of N out-diffusion from the SOG film and O in-diffusion into the SOG film, which was due to the plasma treatment prior to the conventional cure annealing process. It was also confirmed from the XRR measurements that the SOG film was densified by the plasma treatment. Moreover, UV-Raman measurements were performed to evaluate the Si stress at the SKVSi interface that was induced during the gap filling process. The stress was controlled by the appropriate plasma treatment. Thus, we concluded that the plasma treatment was effective for the suppressions of SOG film shrinkage and stress induction and for the SOG film densification.
机译:我们研究了使用硬X射线光电子能谱,X射线反射法(XRR)和UV拉曼光谱通过等离子体处理对旋涂玻璃(SOG)膜的体积收缩的抑制机理。 SOG膜收缩的抑制归因于N从SOG膜向外扩散和O向SOG膜内部扩散的控制,这是由于在常规固化退火工艺之前进行了等离子体处理所致。从XRR测量还证实了SOG膜通过等离子体处理被致密化。此外,进行了紫外线拉曼测量以评估在间隙填充过程中在SKVSi界面处产生的Si应力。通过适当的等离子体处理来控制应力。因此,我们得出结论,等离子体处理对于抑制SOG膜的收缩和应力诱导以及SOG膜的致密化是有效的。

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  • 会议地点 Vancouver(CA);Vancouver(CA)
  • 作者单位

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan,Research Fellow of the Japan Society for the Promotion of Science, 8 Ichiban-cho, Chiyoda-ku, Tokyo 102-8472, Japan;

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan;

    TOKYO ELECTRON AT LTD, 1-8 Fuso-cho, Amagasaki City, Hyogo 660-0891, Japan;

    TOKYO ELECTRON AT LTD, 1-8 Fuso-cho, Amagasaki City, Hyogo 660-0891, Japan;

    TOKYO ELECTRON AT LTD, 1-8 Fuso-cho, Amagasaki City, Hyogo 660-0891, Japan;

    TOKYO ELECTRON AT LTD, 1-8 Fuso-cho, Amagasaki City, Hyogo 660-0891, Japan;

    TOKYO ELECTRON AT LTD, 1-8 Fuso-cho, Amagasaki City, Hyogo 660-0891, Japan;

    School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 材料;
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  • 入库时间 2022-08-26 14:05:28

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