Effect of High-K Spacer on the Performance of Gate-Stack Uniformly doped DG-MOSFET

摘要

In this work, we have analyzed the novelty of the Gate Stack Double Gate (DG) MOSFET with respect to different spacer variations in order to reduce the short channel effect challenges and simultaneously increasing the device performance. Silicon is used as the channel material along with the gate stacked technology for studying the analog performance and Radio Frequency (RF) performance of the device. For gate stacking, two types of oxides are used- one denoting low-K i.e SiO₂ and the other as high-K i.e- HfO₂. Spacers with various permittivities were used to understand their effects on the performance of the device. The simulation result shows that the use of spacer material affected both the analog and RF behavior of the device significantly. The computer aided design (TCAD) simulations have been carried by SILVACO International.