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Rethinking on-chip DRAM cache for simultaneous performance and energy optimization

机译:重新考虑片上DRAM缓存以实现同时的性能和能源优化

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State-of-the-art DRAM cache employs a small Tag-Cache and its performance is dependent upon two important parameters namely bank-level-parallelism and Tag-Cache hit rate. These parameters depend upon the row buffer organization. Recently, it has been shown that a small row buffer organization delivers better performance via improved bank-level-parallelism than the traditional large row buffer organization along with energy benefits. However, small row buffers do not fully exploit the temporal locality of tag accesses, leading to reduced TagCache hit rates. As a result, the DRAM cache needs to be re-designed for small row buffer organization to achieve additional performance benefits. In this paper, we propose a novel tag-store mechanism that improves the Tag-Cache hit rate by 70% compared to existing DRAM tag-store mechanisms employing small row buffer organization. In addition, we enhance the DRAM cache controller with novel policies that take into account the locality characteristics of cache accesses. We evaluate our novel tag-store mechanism and controller policies in an 8-core system running the SPEC2006 benchmark and compare their performance and energy consumption against recent proposals. Our architecture improves the average performance by 21.2% and 11.4% respectively compared to large and small row buffer organizations via simultaneously improving both parameters. Compared to DRAM cache with large row buffer organization, we report an energy improvement of 62%.
机译:先进的DRAM缓存使用一个小的Tag-Cache,其性能取决于两个重要参数,即存储层级并行度和Tag-Cache命中率。这些参数取决于行缓冲区的组织。最近,已经证明,与传统的大行缓冲区组织相比,小型行缓冲区组织通过改进的存储体级并行性可提供更好的性能,同时还具有节能优势。但是,小的行缓冲区不能完全利用标签访问的时间局部性,从而导致TagCache命中率降低。因此,需要针对小型行缓冲区组织重新设计DRAM高速缓存,以获得更多的性能优势。在本文中,我们提出了一种新颖的标签存储机制,与采用小行缓冲区组织的现有DRAM标签存储机制相比,该机制可将标签缓存命中率提高70%。此外,我们采用新颖的策略增强了DRAM缓存控制器,该策略考虑了缓存访问的位置特征。我们在运行SPEC2006基准的8核系统中评估了我们新颖的标签存储机制和控制器策略,并将其性能和能耗与最新建议进行了比较。通过同时改进两个参数,与大型和小型行缓冲区组织相比,我们的体系结构分别将平均性能提高了21.2%和11.4%。与具有大行缓冲区组织的DRAM缓存相比,我们报告了62%的能源节省。

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