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Profiling of the Mechanical Properties of Ultralow-k Films Using Nanoindentation Techniques

机译:使用纳米压痕技术分析超低k膜的机械性能

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Several nanoindentation techniques were applied to the surface, the reverse side and cross-sections of PECVD ultralow-k (ULK) film stacks to characterize their elasto-plastic properties quantitatively. Results showed good agreement of the reduced modulus (E_r) values measured from above and on cross-sections, respectively. E_r decreased by 10-22% from the upper to the lower surface of the films. This gradient suggests that UV light absorption inside the film leads to slightly reduced curing at the rear side of the films compared to the surface of the ULK layers. Both quasi-static nanoindentation and dynamic mechanical mapping showed this trend. It is demonstrated that quantitative mechanical mapping can be performed with a lateral resolution < 100nm. Slight local variations of E_r were detected on ULK/SiC_xN_y films stacked on top of Cu-low-k interconnect structures.
机译:几种纳米压痕技术被应用于PECVD超低k(ULK)薄膜叠层的表面,背面和横截面,以定量表征其弹塑性特性。结果表明,分别从上方和在横截面上测得的降低模量(E_r)值吻合良好。从薄膜的上表面到下表面,E_r降低了10-22%。该梯度表明,与ULK层的表面相比,膜内部的UV光吸收导致膜背面的固化略有减少。准静态纳米压痕和动态力学制图均显示了这一趋势。结果表明,可以用小于100nm的横向分辨率进行定量机械制图。在堆叠在Cu-low-k互连结构顶部的ULK / SiC_xN_y薄膜上检测到E_r的局部变化很小。

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