Low temperature hydrogenation of dislocated Si

摘要

The effect of wet chemical etching and subsequent annealing on the electrical activity of the dislocation-related centers in n-type Si is investigated by the deep-level transient spectroscopy. It is observed that hydrogen penetrates into the samples already during room temperature etching but passivates the dislocation centers only after 300 deg C annealing. The different dislocation centers exhibit different efficiency of hydrogen passivation. Possible reasons for the observed peculiarities of the dislocation passivation are discussed. direct c 1999 Elsevier Science S.A. All rights reserved.