Hydrogen passivation of multicrystalline silicon solar cells

摘要

The use of hydrogen for passivation of multicrystalline silicon in solar cell technology is described. Three kinds of hydrogen incorporation into mc-Si solar cells have been evaluated: hydrogen diffusion out of a SiN-layer (SiN:H), low-energy hydrogen ion implantation (HII), and remote plasma hydrogen passivation (RPHP). Best results were obtained by RPHP, whereas using HII< damage exceeded the passivation effect to some extent. While SiN:H passivates more the grains, RPHP acts particular on grain boundaries. Combining hydrogen passivation by SiN:H and RPHP leads to optimal bulk passivation. We have investigated the influence of RPHP to various mc-Si materials by solar cell and diffusion length measurements. CVD layers and ribbon material show the strongest increase in performance. A boost of up to 77.0 mV in the open-circuit voltage and 2.0