PSTM images for semiconductor nanotechnologies

摘要

Microelectronic nanotechnologies have a need for non destructive imaging methods at a submicron scale. In this paper we show how Photon Scanning Tunneling Microscopy images could be obtained from the surface of semiconductors. Calculation of the transmitted light intensity has been performed for glass and semiconductor materials arrangements. It is demonstrated from a computer simulation that using semiconductor materials in the prism, the sample and the tip leads to unexpectedly high performances. An emphasis is put on the ability of PSTM to give images of layers on semiconductor substrates.