Using production scale AIXTRON MOCVD systems various heterointerfaces in the GaInN/GaN system have been studied in depth. GaInN single hetero layers were investigated to optimise photoluminescence properties. Several approaches of capping GaInN/GaN with another GaN layer to develop high quality double-hetero (DH) structures were presented. Using an optimised interfacing technique we obtain device quality DH structures with state of the art coposition uniformity across a 2 inch wafer.
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