CdS nanoparticles embedded in metal-insulator-semiconductor structures

摘要

Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.