A New Graded Band Gap Channel MOSFET for Low Noise and GHz Applications

摘要

A new Graded Band Gap Channel (GBGC) MOSFET is suggested to make use of the improved electrical properties of SiGe over Si at high frequencies of operation. The device performance is analyzed by using an analytical model and the obtained results are compared with those of conventional Si and Non-Uniform Doped Channel (NUDC) MOSFETs. Finally, the noise behavior of the new MOSFET is investigated to show its superior performance over conventional Si MOSFETs at GHz frequencies of operation.