Ferromagnetic GaSb/InAs-based Materials and MnAs Thin Films for Spintronics Applications

摘要

Ferromagnetic GaSb/InAs structures were fabricated for investigation of their potentials in spintronics applications. The growth and characterization of Ga_(1-x)Mn_xSb random alloys and GaSb/Mn digital alloys resulted in materials with robust ferromagnetism, with hysteresis observable in Hall experiments at temperatures as high as 60 K in the case of digital alloys. As a candidate for spin injection, MnAs epilayers were studied. A strong dependence on sample dimensions was found for MnAs microstructures. It was observed that exchange interaction between MnAs and antiferromagnetic Cr is effective in maintaining ferromagnetic properties in MnAs microstructures.