Transconductance Linearity Improvement of E-pHEMT at High Vgs

摘要

This paper gives origins of transconductance reduction of E-HEMT at high Vgs and ways to improve transconductance linearity. Channel carrier density and access resistance of ungated region are the sources of transconductance reduction. Epi structure, that adopted n+ InGaAs and delta doped cap layer, and Self Align Gate (SAG) process leaded to improvement of transconductance linearity.