Department of Electrical Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
Institute of Materials Research and Engineering, Singapore 117602, Singapore;
Photonics Institute, Vienna University of Technology, Gusshausstra;
InGaN/GaN quantum well; metal organic chemical vapor deposition; saturable absorber; absorption; recovery time;
机译:InGaN / GaN量子阱可饱和吸收剂的吸收恢复时间减少
机译:1300 nm量子点可饱和吸收镜的超快吸收恢复动力学
机译:单点控制InGaN / GaN量子点中的双光子吸收
机译:去除和控制IngaN / GaN量子阱饱和吸收剂的快速吸收恢复时间
机译:极性InGaN / GaN量子阱结构的光学研究
机译:用于光电二极管检测器应用的InGaN / GaN量子阱的增强的光吸收和载流子传输
机译:1300 nm量子点可饱和吸收镜的超快吸收恢复动力学
机译:用于激光二极管应用的GaN,InGaN和GaN / InGaN量子阱结构的mBE生长和性质