Department of Mechanical Engineering, Hsiuping Institute of Technology, Taichung 41283, Taiwan;
Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;
Institute of Photonics, National Changhua University of Education, Chan;
light-emitting diode; InGaN; piezoelectric effect; numerical simulation;
机译:高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
机译:交错式InGaN / InGaN量子阱发光二极管的内部效率
机译:多量子阱InGaN / GaN蓝光发光二极管效率下降机理的研究
机译:交错量子井蓝ingAn发光二极管的数值研究
机译:高效紫色和蓝色IngaN微胶囊发光二极管
机译:利用数值模拟研究InGaN双量子阱蓝激光二极管的异常温度特性
机译:蓝色InGaN发光二极管效率下降的数值研究