Department of Physics, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6000, South Africa;
point defects (vacancies, interstitials, color centers, etc.) and defect clusters; doping and impurity implantation in Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors; Ⅲ-Ⅴ semiconductors; Ⅲ-Ⅴ semiconductors; Ⅲ-Ⅴ semiconductors; chemical vapor deposition (including;
机译:关于AlGaN合金中Si掺杂的性质
机译:硅掺杂对AlGaN合金的可变温度光致发光性能的影响
机译:通过量子势垒的Si掺杂设计提高AlGaN基深紫外发光二极管的性能
机译:论血清掺杂的性质在AlGaN合金中
机译:基于AlGaN合金的紫外线电吸收调制器和发光二极管的开发
机译:(AlN)m /(GaN)n超晶格中MgGaδ掺杂降低高Al含量AlGaN合金中Mg活化能的实验证据
机译:合金组成和Si掺杂对(Inxga1-x)203薄膜空位缺陷形成的影响