Near-field scanning optical microscopy for characterisation of photovoltaic materials

摘要

Near-field scanning optical microscopy (NSOM) enables nanometer scale studies of optical and optoelectronic properties. A NSOM setup has been designed and constructed to investigated carrier lifetime in the vicinity of extended defects such as grain boundaries and dislocations, as well as surface topography in photovoltaic materials. The benefits of the NSOM technique and the different modes employed are discussed. Some preliminary results are presented.