首页> 外文会议>Conference on Optoelectronics, Materials, and Devices for Communications Nov 12-15, 2001, Beijing, China >Primary Investigation of Optical Power Limiting of M(DMID)_2C_x and M(DMIT)_2C_x (M=Ni, Cu) (C=TMA, TBA)
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Primary Investigation of Optical Power Limiting of M(DMID)_2C_x and M(DMIT)_2C_x (M=Ni, Cu) (C=TMA, TBA)

机译:M(DMID)_2 C _x和M(DMIT)_2 C _x(M = Ni,Cu)(C = TMA,TBA)的光功率限制的初步研究

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摘要

Optical limiting property of two types of charge transfer salt [M(DMID)_2][C]_x and [M(DMIT)_2][C]_x (M = Ni, Cu) (C=TMA, TBA) is studied. The comparison of these two series complexes demonstrates that the optical limiting effect of the Ni-based complexes is better than that of the Cu-based complexes, both of them are a little less than that of C_(60). The nonlinear absorption coefficient that determined by optical limiting technique for Ni-based complexes is about one order of magnitude higher than that of Cu-based complexes. On the other hand, partial charge transfer may enhance the optical limiting effect in the Cu-based complexes, but it doesn't occur in the Ni-based complexes. All may be attributed to the typical column structure that caused by plan configuration.
机译:研究了两种类型的电荷转移盐[M(DMID)_2] [C] _x和[M(DMIT)_2] [C] _x(M = Ni,Cu)(C = TMA,TBA)的光学极限性质。这两个系列配合物的比较表明,镍基配合物的光学限制效果好于铜基配合物,两者均比C_(60)小。通过光学限制技术确定的镍基络合物的非线性吸收系数比铜基络合物的非线性吸收系数高约一个数量级。另一方面,部分电荷转移可以增强Cu基络合物的光学限制效应,但在Ni基络合物中不会发生。所有这些都可以归因于计划配置导致的典型列结构。

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